Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 57, Issue 4, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.57.04FB03
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Funding
- Japan Society for the Promotion of Science [17K06359]
- Grants-in-Aid for Scientific Research [17K06359] Funding Source: KAKEN
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We experimentally studied the optimization of the hot-C+-ion implantation process for forming nano-SiC (silicon carbide) regions in a (100) Si-oninsulator substrate at various hot-C+-ion implantation temperatures and C+ ion doses to improve photoluminescence (PL) intensity for future Sibased photonic devices. We successfully optimized the process by hot-C+-ion implantation at a temperature of about 700 degrees C and a C+ ion dose of approximately 4 x 10(16) cm(-2) to realize a high intensity of PL emitted from an approximately 1.5-nm-thick C atom segregation layer near the surface-oxide/Si interface. Moreover, atom probe tomography showed that implanted C atoms cluster in the Si layer and near the oxide/Si interface; thus, the C content locally condenses even in the C atom segregation layer, which leads to SiC formation. Corrector-spherical aberration transmission electron microscopy also showed that both 4H-SiC and 3C-SiC nanoareas near both the surface-oxide/Si and buried-oxide/Si interfaces partially grow into the oxide layer, and the observed PL photons are mainly emitted from the surface SiC nano areas. (C) 2018 The Japan Society of Applied Physics.
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