Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 57, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.57.070301
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- Ministry of Science and Technology (Taiwan, R.O.C.) [105-2221-E-005-059-MY3]
- Innovation and Development Center of Sustainable Agriculture from The Featured Areas Research Center Program of the Higher Education Sprout Project within Ministry of Education (MOE) in Taiwan
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We report on the effects of substrate temperature (600-800 degrees C) on metal-semiconductor-metal photodetectors (PDs) fabricated with aluminum-doped gallium oxide (AGO) films by pulsed laser deposition. The crystal quality of the AGO films was improved by increasing the substrate temperature. Because of the AGO(400) appearance, the d-spacing of AGO(201) decreased, whereas the strain of this plane increased. This could be explained by the formation of the AGO(400) plane in the films, generating a compressive strain in the AGO(201) plane. The AGO PDs showed a maximum absorption at a wavelength of 240 nm, and the enhanced crystal quality would benefit the device performance. (C) 2018 The Japan Society of Applied Physics.
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