Journal
INORGANIC CHEMISTRY
Volume 57, Issue 12, Pages 6783-6786Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.inorgchem.8b00891
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Funding
- Strategic Priority Research Program of the Chinese Academy of Sciences [XDB20000000]
- NSF of China [21701176, 21401052]
- National Postdoctoral Program for Innovative Talents [BX201600163]
- China Postdoctoral Science Foundation [2016M600510]
- National Key Laboratory Development Fund [20180026]
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Two new infrared (IR) nonlinear optical (NLO) sulfides, Na2Ga2GeS6 and Na2Ga2GeS6 , were obtained by mixing different typical NLO-active motifs GaS4 and GeS4/SnS4 in the alkali metal-containing system. The IR NLO sulfides present laser-induced damage thresholds that are 18.1 and 17.9 times that of the reference AgGaS2 (AGS) and second-harmonic generation efficiencies that are 0.8 and 1.1 times that of AGS. These properties originate from the GaS4, GeS4, and SnS4 tetrahedral blocks in the structures of the sulfides. Both compounds also exhibit a broad transparency range and type-I phase-matching behavior, which support their high potential in high-power laser applications. This work sheds new light on the development of promising mid-IR NLO materials by combining different NLO-active motifs.
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