Journal
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2
Volume 778-780, Issue -, Pages 390-393Publisher
TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/MSF.778-780.390
Keywords
stacking fault; epitaxy; surface
Ask authors/readers for more resources
Epitaxial layers grown on mechanically lapped 4H-SiC (0001) substrates were analyzed by using scanning ion microscopy (SIM), photoluminescence (PL) mapping and transmission electron microscopy (TEM). Even in the use of substrates with standard nitrogen concentration of 1.3 x 10(19) cm(-3), double Shockley-type stacking faults were observed to be formed in the epitaxial layer from the interface between the epitaxial layer and the substrate without any external stresses. Surface damaged layer seems to cause the formation of not only 2SSFs but also threading edge dislocation (TED) half-loops during epitaxial growth.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available