Journal
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2
Volume 778-780, Issue -, Pages 1083-+Publisher
TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/MSF.778-780.1083
Keywords
Power Electronics; Inverter; dc-dc converter; gate-drive circuit; reverse conduction; SiC JFET; SiC BJT; SiC MOSFET; parallel connection; modular multilevel converter
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The message of this paper is that the silicon carbide power transistors of today are good enough to design converters with efficiencies and switching speeds beyond comparison with corresponding technology in silicon. This is the time to act. Only in the highest power range the devices are missing. Another important step towards high powers is to find new solutions for multi-chip circuit designs that are adapted to the high possible switching speeds of unipolar silicon carbide power transistors.
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