Journal
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2
Volume 778-780, Issue -, Pages 971-+Publisher
TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/MSF.778-780.971
Keywords
4H-SiC; GaN; HEMT; UMOSFET
Funding
- Advanced Power Device Research Association
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In this paper the DC and switching performance of 600V Si, SiC and GaN power devices using device simulation. The devices compared are Si superjunction MOSFET, Si field stop IGBT, SiC UMOSFET and GaN HEMT.
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