Journal
IET POWER ELECTRONICS
Volume 11, Issue 4, Pages 646-653Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/iet-pel.2017.0499
Keywords
insulated gate bipolar transistors; thermal management (packaging); discrete chips; modules; thermal management; improved IGBT ruggedness; vertical concepts; advanced cell concepts; thin-wafer-processing; technological aspects; IGBT development
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Recent progress in insulated gate bipolar transistor (IGBT) development is reviewed. Highlighted issues range from technological aspects such as special processes suitable for thin-wafer-processing, through the advanced cell and vertical concepts to approaches for improved IGBT ruggedness. Latest advancements regarding thermal management in both modules and discrete chips are also addressed.
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