Journal
IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume 34, Issue 4, Pages 3689-3699Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2018.2853563
Keywords
High-speed switching; miniature assembly; nanosecond avalanche drivers; optical radars; peak power
Categories
Funding
- Academy of Finland [310152, 307362]
- Ministry of Education and Science of the Russian Federation [11.5861.2017]
- Academy of Finland (AKA) [310152, 310152] Funding Source: Academy of Finland (AKA)
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The state-of-the-art long-distance near-infrared optical radars use laser-diode-based miniature pulsed transmitters producing optical pulses of 3-10 ns in duration and peak power typically below 40 W. The duration of the transmitted optical pulses becomes a bottleneck in the task of improving the radar ranging precision, particularly due to the progress made in developing single photon avalanche detectors. The speed of miniature high-current drivers is limited by the speed of the semiconductor switch, either a gallium nitride field-effect transistor, the most popular alternative nowadays, or a silicon avalanche bipolar junction transistor (ABJT), which was traditional in the past. Recent progress in the physical understanding of peculiar 3-D transients promises further enhancement in speed and efficiency of properly modified ABJTs, but that is not the only factor limiting the transmitter speed. We show here that a low-inductance miniature transmitter assembly containing only a specially developed capacitor, a more advanced transistor chip than that used in commercial ABJTs and a laser diode, has allowed peak power from 40 to 180 W to be reached in optical pulses of 1-2 ns in duration without after-pulsing relaxation oscillations. This finding is of interest for compact low-cost, long-distance decimeter-precision lidars, particularly for automotive applications.
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