γ-Ray Radiation Effects on an HfO2-Based Resistive Memory Device

In this paper, electrical characteristics of an HfO2-based resistive switching memory device are investigated before and after gamma-ray radiation with various total ionizing doses (TIDs). The device can still function properly even if irradiated with a TID of 20 Mrad(Si). The small changes of resistance states and set/reset voltages induced by gamma-ray radiation can hardly influence the proper function of the device. The gamma-ray radiation does not significantly degrade both retention and endurance characteristics even after a high-TID exposure. The radiation effects on the resistive switching memory device show little dependence on the cell area. The results suggest that the HfO2-based resistive switching memory device has good gamma-ray radiation-resistant capability.