Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 17, Issue 1, Pages 61-64Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2017.2661818
Keywords
gamma-ray; hafnium oxide; radiation; resistive switching; total ionizing dose
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Funding
- National Natural Science Foundation of China [61274086, 61404022]
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In this paper, electrical characteristics of an HfO2-based resistive switching memory device are investigated before and after gamma-ray radiation with various total ionizing doses (TIDs). The device can still function properly even if irradiated with a TID of 20 Mrad(Si). The small changes of resistance states and set/reset voltages induced by gamma-ray radiation can hardly influence the proper function of the device. The gamma-ray radiation does not significantly degrade both retention and endurance characteristics even after a high-TID exposure. The radiation effects on the resistive switching memory device show little dependence on the cell area. The results suggest that the HfO2-based resistive switching memory device has good gamma-ray radiation-resistant capability.
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