A 0.7/1.1-dB Ultra-Low Noise Dual-Band LNA Based on SISL Platform

This paper presents an ultra-low noise concurrent 2.45-/5.25-GHz dual-band low-noise amplifier (LNA) based on a substrate integrated suspended line (SISL) platform. This is the first LNA design in the SISL platform. To achieve optimal noise and power gain at both bands, the transition part of this SISL LNA is modeled and optimized to work with the matching networks consisting of LC components and transmission lines. The SISL platform has the merits of high performance, low loss, and low cost with the standard print circuit board process. With the proposed technique, the dedicated LNA demonstrates the advantages of self-packaging, compact size, ultra-low noise figure of 0.7/1.1 dB, and rather high power gain of 28.4/28.8 dB at 2.45/5.25 GHz, respectively.