Journal
IEEE TRANSACTIONS ON MAGNETICS
Volume 54, Issue 11, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2018.2849753
Keywords
Silicon (Si) spintronics; spin detection; spin injection
Funding
- Japan Society for the Promotion of Science [16H02333]
- Ministry of Education, Culture, Sports, Science, and Technology [26103003]
Ask authors/readers for more resources
We show that there is a crystal orientation effect on the two-terminal local magnetoresistance (MR) in silicon (Si)-based lateral spin-valve (LSV) devices. When we compare the local MR effect between Si < 100 > and Si < 110 > LSV devices, the magnitude of the local MR signals for Si < 100 > LSV devices is always larger than that for Si < 110 > LSV devices. For Si < 100 > LSV devices, the magnitude of the room-temperature MR ratio reaches approximately 0.06%. We infer that it is important to consider the tunneling anisotropic spin polarization, which is due to the magnetization direction of the ferromagnetic contacts relative to the Si crystal orientation, in the fabricated LSV devices.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available