Journal
IEEE TRANSACTIONS ON MAGNETICS
Volume 54, Issue 4, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2017.2772185
Keywords
Cache memory; MRAM; spin-orbit torque-MRAM (SOT-MRAM); spin transfer; spin-orbit torque; spintronics; spin transfer torque-magnetic random access memory (STT-MRAM)
Funding
- European Commission through the Seventh Framework Program (spOt project) [318144]
- French Agence Nationale de la Recherche through Project SOSPIN
- Swiss National Science Foundation [200020_172775]
- program Competitive Growth of KFU
- program CMIRA'Pro of the region Rhone-Alpes
- Swiss National Science Foundation (SNF) [200020_172775] Funding Source: Swiss National Science Foundation (SNF)
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We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the nanosecond range. Our results show that spin-orbit torque-MRAM allows for fast and low-power write operations, which makes it promising for non-volatile cache memory applications.
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