Journal
IEEE TRANSACTIONS ON MAGNETICS
Volume 54, Issue 11, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2018.2832170
Keywords
Cross-layer analysis; magnetic random access memory (MRAM); spin-orbit torque (SOT); ultrahigh-speed magnetization switching
Funding
- National Natural Science Foundation of China [61704005, 61571023, 51602013, 61602022]
- International Collaboration Project [B16001]
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Ultrahigh-speed magnetization switching mechanism is strongly pursued, as it can improve the write performance of the magnetic random access memory (MRAM) and further extend the application area of spintronics. Currently, a well-studied switching mechanism is the spin transfer torque (STT), whose speed, however, is limited by an intrinsic incubation delay. Recently, spin-orbit torque (SOT) was proposed to solve the speed bottleneck of the STT. In this paper, we evaluate the potential of two types of SOT-MRAMs, whose data can be ultrafast written based on the recently discovered field-free SOT mechanisms, respectively. A cross-layer analysis is presented involving device modeling, circuit-level optimization, and architecture-level evaluation. First, the principle of the magnetization switching is analyzed with the macrospin simulation. Then, the optimization strategies at the circuit level are generalized through the SPICE-type simulation. Finally, we build up the memory architecture with the SOT-MRAMs, STT-MRAM, and static RAM. Their read/write performances are evaluated with NVSim software. It is demonstrated that one of the studied SOT-MRAMs shows the promising prospect in the non-volatile memory, especially suitable for high-capacity cache.
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