Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 8, Pages 3192-3198Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2850066
Keywords
Back-gated; carbon doping; GaN-on-Si
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The impact of the extrinsic carbon doping level was investigated with the aim of finding the optimal level for GaN-on-Si HFETs. A tradeoff between the crystal quality degradation by carbon doping and dynamic properties of HFET structures was observed indicating the role of vertical dislocations in the dynamic performance of the carbon-doped GaN buffer.
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