Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 8, Pages 3214-3220Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2848844
Keywords
Crossbar array; delay; energy; NbO2; performance analysis; threshold switching selector
Funding
- Semiconductor Research Corporation through the Nanoelectronics Research Initiative Theme [2624.001]
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Performance of the crossbar memory array highly depends on the selector characteristics. In this paper, rigorous transient analyses are performed for a large-size crossbar memory array using novel NbO2-based selectors with a threshold switching behavior. To enable accurate and efficient array-level simulation, an electrostatic discharge-based compact model is employed to effectively describe the I-V characteristics of the selector. Multiple key design parameters of the selector are investigated, such as the threshold voltage, leakage current, and intrinsic switching speed. A sensitivity analysis is performed to evaluate the impact of hypothetical improvements in various selector parameters. In addition, the impacts of resistances of interconnect and memory element on the array-level access delay and energy dissipation are quantified. The results show that reducing the threshold voltage of selectors provides the most significant performance improvement, where up to 80% of the energy-delay product saving is observed if the threshold voltage is reduced by 50%.
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