Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing

Hf0.5Zr0.5O2 (HfZrO) thin-film ferroelectric materials have recently drawn considerable attention due to their attractive properties such as large bandgap (> 5 eV), extreme thin thickness (<= 10 nm), and good Si-compatibility. However, high crystallization temperature (600 degrees C-1000 degrees C) and relatively low remanent polarization (P-r) compared to conventional perovskite ferroelectric materials are not suitable for flexible energy related devices, and are insufficient to overcome the barriers of conventional ferroelectric memory. In this paper, we investigated the effect of high-pressure postmetallization annealing (HPPMA) on the ferroelectric properties of the HfZrO metal-ferroelectric-metal (MFM) devices. HfZrO MFM capacitors annealed at 450 degrees C/50 bar shows a P-r value of over 20 mu C/cm(2) which is very advanced P-r value. Based on the short-pulse switching technique, we quantitatively and systematically examined the improved characteristics of HfZrO prepared by HPPMA in terms of coercive field (E-c) and possibly involved interfacial capacitance (C-i).