Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 6, Pages 2454-2460Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2828702
Keywords
Gate stress; HEMT; hole injection; p-GaN gate; Schottky contact; threshold voltage shift
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We investigate the impact of the gate contact on the threshold voltage stability in p-GaN gate AlGaN/GaN heterojunction field-effect transistors with double pulse measurements on the p-GaN gate devices and device simulations. We find that, under gate stress, in the case of high-leakageSchottky contact, a negative threshold voltage shift results from hole accumulation in the p-GaN region. Conversely, in the case of low-leakage Schottky contact, hole depletion in the p-GaN region gives rise to a positive threshold voltage shift. More generally, we show that an imbalance between the hole tunneling current through the Schottky barrier and the thermionic current across the AlGaN barrier results in a variation of the total charge stored in the p-GaN region, which in turn is responsible for the observed threshold voltage shift. Finally, we present a simplified equivalent circuit model for the p-GaN gate module.
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