Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 3, Pages 1009-1013Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2797073
Keywords
InGaZnO (IGZO); InOx; metal-hydroxyl (M-OH); postmetallization annealing (PMA); thin-film transistor (TFT)
Funding
- National Natural Science Foundation of China [61604040]
- Fundamental Research Funds for the Central Universities [2242015KD003]
- Natural Science Foundation of Jiangsu Province [BK20140639]
- Research Grants Council of Hong Kong Special Administrative Region [HKU 17203814]
- University Development Fund, Nanotechnology Research Institute, The University of Hong Kong [00600009]
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The properties of metal-hydroxyl (M-OH) and InOx defects in InGaZnO (IGZO) and their influences on the performance of IGZO thin-film transistor (TFT) are investigated. The defects in the IGZO film are intentionally modulated by using various postmetallization-annealing (PMA) treatments. PMA is effective to densify the IGZO film and thus suppress the formation of M-OH. On the other hand, the PMA also leads to the formation of InOx near the edge of conduction channel. It is found that M-OH acts as deeplevel acceptor like trap and has a heavy influence on the off-current, threshold voltage, and subthreshold swing of the TFT. On the other hand, InOx acts as shallow-level donor andmainly affects the carriermobility of the TFT. The effects of M-OH and InOx on the TFT performance decrease and increase, respectively, with decreasing the channel length.
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