Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 3, Pages 1018-1022Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2797300
Keywords
Indium zinc oxide (IZO); pulsed current-voltage (I-V); solution processed; thin-film transistors (TFTs); tungsten (W)-doping
Funding
- National Key Research and Development Program of China [2016YFB0401103]
- NSFC [61376085, 11575132, 11574083]
- Hubei Province Natural Science Foundation [2016CFA028]
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High-performance thin-film transistors (TFTs) were obtained by incorporating small amount of tungsten (W) into amorphous indium zinc oxide (IZO)-based thin films via a solution process. Compared with original IZO TFTs, 0.2-wt% W-doped IZO TFTs exhibit improved bias stress stability and field-effect mobility of 30.5 cm(2)/V center dot s. Meanwhile, the bias stress stability of IZO TFTs can be further enhanced with 0.5-wt% W-doping. The pulsed currentvoltage (I-V) method is employed to study the hysteresis and charging behavior of theW-doped IZO TFTs. The X-ray photoelectron spectroscopy analysis and the pulsed I-V measurement results suggest that these desirable performances could be attributed to the suppression of excessive oxygen vacancies and improved interface quality because ofW-doping. The results represent an effective strategy to achieve high-performance solution-processed amorphous oxide-based TFTs with desirable stability byW-doping.
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