Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 3, Pages 1107-1112Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2797428
Keywords
Hf-La oxide; high-kappa dielectric; hysteresis; organic thin-film transistor (OTFT)
Funding
- University of Hong Kong
- URC for Seed Fund for Strategic Research Theme of HKU on New Materials [201409176206]
- University Development Fund (Nanotechnology Research Institute) of The University of Hong Kong [00600009]
- Xi'an Jiaotong University [1191320153]
- National Natural Science Foundation of China [61704137]
- China Postdoctoral Science Foundation [2016M602821]
- Postdoctoral Science Foundation of Shaanxi Province [2016BSHEDZZ39]
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The effects of La content in HfLaO gate dielectric on the performance of pentacene organic thin-film transistor (OTFT) fabricated on Si have been studied. The OTFT with Hf0.103La0.897Oy gate dielectric shows high performance such as high carrier mobility of 3.45 cm(2).V-1.s(-1) (132 times and 40 times higher than those of devices using Hf oxide and La oxide, respectively), small threshold voltage of -2.09 V, and negligible hysteresis of -0.029 V. Binding-energy shift of Hf 4f peak in the X-ray photoelectron spectroscopy spectrumindicates that La incorporation can passivate the oxygen vacancies in HfO2. Atomic force microscope reveals that the La incorporation can reduce the surface roughness of the gate dielectric by suppressing the crystallization of HfO2. Therefore, by using Hf0.103La0.897Oy as gate dielectric, OTFT with high carrier mobility and small threshold voltage can be obtained.
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