Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 2, Pages 463-469Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2785248
Keywords
BSIM-IMG; fully depleted silicon-on-insulator (FDSOI); gate oxide; image sensor; mobility; transconductance
Funding
- Semiconductor Research Corporation [2671.001]
- Berkeley Device Modeling Center, University of California at Berkeley, Berkeley, CA USA
Ask authors/readers for more resources
Anomalous transconductancewith nonmonotonic back-gate bias dependence observed in the fully depleted silicon-on-insulator (FDSOI) MOSFET with thick front-gate oxide is discussed. It is found that the anomalous transconductance is attributed to the domination of the back-channel charge in the total channel charge. This behavior is modeled with a novel two-mobilitymodel, which separates themobility of the front and back channels. These two mobilities are physically related by a charge-based weighting function. The proposed model is incorporated into BSIM-IMG and is in good agreement with the experimental and simulated data of FDSOI MOSFETs for various front-gate oxides, body thicknesses, and gate lengths.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
