TCAD Simulation of Breakdown-Enhanced AlGaN-/GaN-Based MISFET With Electrode-Connected p-i-n Diode in Buffer Layer

This paper presents an optimized normally off GaN-based metal-insulator-semiconductor field-effect transistor (MISFET) with an electrode-connectedp-i-n diode inserted in the buffer layer, i.e., EC-PINMISFET, and in which the substrate is removed for the suppression of the vertical leakage current. We provide the simulation results of the proposed MISFET. The EC-PIN MISFET with L-gd = 6 mu m presents an excellent breakdown voltage of 1400 V, which attributes to the improvement of electric field distribution in the gate-drain region and the suppression of leakage current by EC-PIN. In addition, the specific on resistance of 0.64 m Omega . cm(2) and Baliga's figure of merit of 3.08 GW . cm(-2) are achieved in the optimized EC-PIN MISFET, indicating a good tradeoff between the specific on resistance and breakdown voltage.