Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 7, Pages 3073-3076Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2834498
Keywords
Amorphous In-Ga-Zn-O; electrostatic potential; sensor; thin-film transistor; top-gate effect
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In this paper, we discuss a preliminary possibility for sensing of electrostatic potential by taking advantage of the coupling effect in double-gate amorphous In-Ga-Zn-O thin-film transistors (TFTs) (a-In-Ga-Zn-O TFTs), which we call the top-gate effect. The TFT sensing device responds to attaching and detaching charged dielectric materials to the device surface. Drain current of the TFT sensing device changes, depending on the polarity of the charge with a sensitivity of 50 nA/kV. Results discussed here may lead to the possibility for a 2-D active-matrix electrostatic potential sensor.
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