Journal
JOURNAL OF APPLIED PHYSICS
Volume 117, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4905485
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Funding
- National Key Basic Research Program of China [2015CB921203]
- Natural Science Foundation of China [51222206, 11374139]
- Jiangsu Provincial Natural Science Foundation [BK2012016]
- PAPD project of Jiangsu Province
- U.S. Department of Energy, Office of Basic Energy Sciences [DEAC02-98CH10886]
- China Scholarship Council
- Brookhaven National Laboratory
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Transport characteristics of ultrathin SrRuO3 films, deposited epitaxially on TiO2-terminated SrTiO3 (001) single-crystal substrates, were studied as a function of film thickness. Evolution from a metallic to an insulating behavior is observed as the film thickness decreases from 20 to 4 unit cells. In films thicker than 4 unit cells, the transport behavior obeys the Drude low temperature conductivity with quantum corrections, which can be attributed to weak localization. Fitting the data with 2-dimensional localization model indicates that electron-phonon collisions are the main inelastic relaxation mechanism. In the film of 4 unit cells in thickness, the transport behavior follows variable range hopping model, indicating a strongly localized state. Magnetoresistance measurements reveal a likely magnetic anisotropy with the magnetic easy axis along the out-of-plane direction. (C) 2015 AIP Publishing LLC.
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