Journal
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume 18, Issue 3, Pages 481-483Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TDMR.2018.2842253
Keywords
Ion radiation effects; modeling; power semiconductor devices; Schottky diodes; silicon carbide
Funding
- European Space Agency [4000111630/14/NL/PA]
- Academy of Finland through the Finnish Centre of Excellence Programme 2012-2017 (Nuclear and Accelerator Based Physics) [2513553]
- Early State Innovations from NASA's Space Technology Research Grants Program [NNX17AD09G]
- MATRENA Doctoral Programme
- Academy of Finland [1269 696]
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Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This letter demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation.
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