Journal
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
Volume 65, Issue 12, Pages 1874-1878Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSII.2018.2817499
Keywords
CMOS; dual-band; Ku-band; notch filter; switched interdigital resonator; voltage controlled oscillator
Categories
Funding
- Egypt-Japan University of Science and Technology
- VLSI Design and Education Center, University of Tokyo
- Center for Japan-Egypt Cooperation in Science and Technology (E-JUST Center), Kyushu University
- Cadence Corporation
- Keysight Corporation
- [JP16K06301]
- Grants-in-Aid for Scientific Research [16K06301] Funding Source: KAKEN
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A dual band and low phase noise Ku-band voltage-controlled oscillator (VCO) using 180-nm CMOS technology is presented in this brief. The proposed VCO employs a switched notch filter that can operate in the low and high band, which depends on the state of nmos transistor and has a quality factor that is higher than that of a conventional inductor-capacitor (LC) resonator. The proposed resonator doubles the quality factor compared to LC in the technology and reduces the total die area. The first band is realized by the switched interdigital resonator when a nMOS transistor is in the off state. Furthermore, the second band is realized by turning nmos transistor to the on state, which is located between two fingers in the proposed resonator. The chip is implemented in 180-nm CMOS technology, and found that the proposed VCO operates from 15.5 to 16.7 Hz (low band) and 16.6 to 17.4 GHz (high band). At 1.8-V power supply, the power consumption of the oscillator core is 5.4 and 7.2 mW in the low-and high-frequency bands, respectively. The measured phase noise is -107 dBc/Hz at 1 MHz offset from 16.7-GHz carrier frequency.
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