Journal
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
Volume 65, Issue 1, Pages 1-5Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSII.2017.2654441
Keywords
Analog integrated circuit; high-slope; low power; low voltage; MOS-only nano-watt; proportional-to-absolute-temperature (PTAT) voltage generator; voltage reference
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Funding
- National Science Foundation of China [61474092]
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This brief presents an MOS-only voltage reference circuit with high-slope proportional-to-absolute-temperature (PTAT) voltage generators for ultra-low-power applications. Biased by a nano-ampere current reference circuit, the PTAT voltage generator is realized by an asymmetrical differential cell with two additional cross-coupled nMOS/pMOS pairs, which enhance the slope of the PTAT voltage remarkably. As a result, only two cascaded PTAT stages are used to compensate the complementary-to-absolute-temperature voltage generated directly by a diode-connected nMOS in the current reference circuit. Therefore, much power and chip area can be saved. A trimming circuit is also adopted to compensate the process-related reference voltage variations. The experimental results of the proposed reference circuit fabricated in a 0.18-mu m standard CMOS process demonstrate that the circuit could operate under a minimum supply voltage of 1 V, and generate a reference voltage of 756 mV with temperature coefficient of 74 and 49.6 ppm/degrees C under 1-V and 1.8-V power supply, respectively. The proposed circuit consumes only 23 nA under a 1-V power supply, and the active area is only 95 mu m x 170 mu m.
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