Journal
JOURNAL OF SEMICONDUCTORS
Volume 36, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1674-4926/36/2/023005
Keywords
metalorganic vapor phase epitaxy; gallium nitride; high resolution X-ray diffraction
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Funding
- National High Technology Research and Development Program of China [2012AA03A115]
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The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high V/III ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface RMS, which are attributed to the change of growth mode.
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