Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 30, Issue 16, Pages 1443-1446Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2018.2852331
Keywords
Electro-absorption modulators; PAM-4; optical interconnects; silicon photonics
Funding
- Hong Kong Research Grants Council [14212816]
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Integrated germanium-on-silicon Frunz-Keldysh modulators (Ge-EAMs) offer a small footprint and low-energy-per-bit performance for high-speed data communications. In this letter, we study the use of Ge-EAMs for four-lei el pulse amplitude modulation (PAM-4), and report on the linearity of the modulator in terms of its spurious-free dynamic range. The experimental results show that the negative frequency chirp from the modulator can improve the transmission distance of the PAM-4 signal. Using pre-equalization with a 25-GHz bandwidth-limited arbitrary waveform generator, we obtained a data rate of 112 Gb/s with a bit-error-rate of 2.5 x 10(-3) under the 7% overhead hard-decision forward error correction threshold. We observed an extended transmission distance in our 112-Gb/s PAM-4 experiment on a standard single-mode fiber thanks to the negative frequency chirp of the modulator.
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