4.5 Article

Silicon Slot Waveguide Electro-Optic Kerr Effect Modulator

Journal

IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 30, Issue 9, Pages 873-876

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2018.2823080

Keywords

High speed modulator; electro-optic Kerr effect; integrated optics; silicon nanocrystals; slot waveguide; ring resonator

Funding

  1. Natural Sciences and Engineering Research Council of Canada Applied Science in Photonics and Innovative Research in Engineering Program
  2. CMC Microsystems
  3. European Regional Development Fund in the IT4Innovations National Supercomputing Center-Path To Exascale Project, Within the Operational Programme Research, Development and Education [CZ.02.1.01/0.0/0.0/16_013/0001791]

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The theoretical background to calculate the effective index tuning using the ultrafast electro-optic Kerr effect and a design of slot waveguide geometry are presented. Analysis of the slot waveguide ring resonator with silicon nanocrystals as the active medium to implement the CMOS compatible electrooptic Kerr effect modulator indicates a modulation bandwidth of 51 GHz, therefore, allowing for 90 Gb/s data rate transmission, and a low energy consumption of 22.99 fJ/bit.

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