Journal
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume 28, Issue 4, Pages 362-364Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2018.2811242
Keywords
300-GHz wireless communications; microwave photonics; photonic integrated circuits; silicon photonics
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Funding
- Agence Nationale de la Recherche (ANR) through the TERALINKS Project [ANR-16-CHR2-0006-001]
- CNRS
- Lille University, IEMN RF/MEMS Characterization Center, Telecom platform, IRCICA Institute [USR CNRS 3380]
- Equipex FLUX [0017]
- ExCELSiOR Project
- Nord-Pas de Calais Regional Council
- FEDER through the CPER Photonics for Society
- Agence Nationale de la Recherche (ANR) [ANR-16-CHR2-0006] Funding Source: Agence Nationale de la Recherche (ANR)
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In this letter, we report the design, fabrication, and measurement of a silicon photonics-based transmitter (Tx) offering both mass production capability and high integration level potentiality. The Tx circuit consists of an integrated photodiode generating a 200-300-GHz signal for photonic upconversion from baseband to millimeter-wave. This Tx achieved output power in the range of -20 to -30 dBm over the 150-300-GHz frequency band is used to demonstrate an indoor 300-GHz wireless link. The receiver is using a commercial Schottky diode to enable direct detection. Amplitude modulation is successfully tested, and real-time bit error rates are shown for up to 10-Gb/s data rates.
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