4.6 Article

A 0.8-V Resistor-Based Temperature Sensor in 65-nm CMOS With Supply Sensitivity of 0.28 °C/V

Journal

IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 53, Issue 3, Pages 906-912

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2017.2788878

Keywords

Low supply sensor; ratiometric sensing; resistor-based temperature sensor; supply insensitive temperature sensor

Funding

  1. Faculty Research Fund of Konkuk University

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A 0.8-V resistor-based CMOS temperature sensor in 65-nm CMOS process with low supply sensitivity is presented. The temperature-to-voltage conversion gain is maximized by utilizing two types of on- chip resistors with positive and negative temperature coefficient. Reusing the resistor sensor frontend as a reference, the voltage generator of the subsequent A/D converter inherently removes the supply dependence of temperature-to-digital conversion. A 10-bit sub-ranging A/D converter employing 5-bit amplifying interpolation D/A converter enables low-voltage and low-noise A/D conversion. Over a range of -45 degrees C similar to 85 degrees C, the proposed sensor achieves 0.12 degrees C-rms temperature resolution with a conversion time of 10 mu s. After a 2-point calibration, the sensor achieves an inaccuracy of less than +1.6/-1 degrees C while consuming 47 mu W from 0.8-V supply voltage. Measured supply sensitivity is 0.28 degrees C/V over 0.6 similar to 1.2 V, which is one of the lowest ever reported among sub-1-V temperature-to-digital converter designs.

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