Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 24, Issue 6, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2018.2820169
Keywords
Infrared spectroscopy; integrated optoelectronics; optical spectroscopy; silicon on insulator (SOI) technology; spectroscopy
Categories
Funding
- Research Foundation-Flanders (FWO)
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Mid-infrared spectroscopy in the 2-4 mu m wavelength range is of cardinal value for many sensing applications. Current solutions involve bulky and expensive systems to operate. Silicon-on-Insulator (SOI) waveguide technology offers means to miniaturize the different parts of the spectrometer. However, the development of on-chip detectors for the mid-infrared wavelength range is in its infancy and the characteristics are not on par with their discrete (cooled) counterparts. In this work, a compact and cheap mid-infrared spectrometer is realized by integrating a SOI arrayed waveguide grating (AWG) spectrometer operating in the 2.3 mu m wavelength range with a high performance mid-infrared photodiode. The AWG has 12 output channels with a spacing of 225 GHz (4 nm) and a free spectral range of 3150 GHz (56 nm), which are simultaneously collected by a single, transistor outline (TO)-packaged extended InGaAs PIN photodiode. The response of each AWG channel is discerned by time-sequentially modulating the optical power in each output channel using integrated Mach-Zehnder based thermo-optic modulators with a pi-phase shift power consumption of approximate to 50 mW. As an example, the absorption spectrum of a 0.5 mm thick polydimethylsiloxane sheet is sampled and compared to a benchtop spectrometer to good agreement.
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