Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 24, Issue 6, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2018.2827669
Keywords
Avalanche photodiode (APD); CMOS image sensor; detector; Geiger-mode avalanche photodiode (G-APD); image sensor; integrated optics device; integrated photonics; light detection and ranging (LiDAR); low light level; optical sensor; photodiode; photomultiplier; photon counting; photon timing; semiconductor; sensor; silicon; single-photon avalanche diode (SPAD); single-photon imaging; standard CMOS technology; three-dimensional fabrication; three-dimensional vision
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Funding
- Swiss National Science Foundation
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We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P+ /Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus enabling lower tunneling noise and better timing jitter as well as a higher photon detection efficiency and a wider spectrum. In order to prevent premature edge breakdown, a P-type guard ring is formed at the edge of the junction, and it is optimized to achieve a wider photon-sensitive area. In addition, metal-1 is used as a light reflector to improve the detection efficiency further in backside illumination. With the optimized 3-D stacked 45-nm CMOS technology for back-illuminated image sensors, the proposed SPAD achieves a dark count rate of 55.4 cps/mu m(2) and a photon detection probability of 31.8% at 600 nm and over 5% in the 420-920 nm wavelength range. The jitter is 107.7 ps full width at half-maximum with negligible exponential diffusion tail at 2.5 V excess bias voltage at room temperature. To the best of our knowledge, these are the best results ever reported for any back-illuminated 3-D stacked SPAD technologies.
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