Journal
IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 54, Issue 2, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2018.2797960
Keywords
Resonant tunneling devices; semiconductor epitaxial layers; terahertz radiation
Categories
Funding
- Engineering and Physical Sciences Research Council [EP/503812/1, EP/L505055/1]
- European Commission Horizon iBROW [645369]
- University of Glasgow
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We discuss the modelling of high current density InGaAs/AlAs/InP resonant tunneling diodes to maximize their efficiency as THz emitters. A figure of merit which contributes to the wall plug efficiency, the intrinsic resonator efficiency, is used for the development of epitaxial designs. With the contribution of key parameters identified, we analyze the limitations of accumulated stress to assess the manufacturability of such designs. Optimal epitaxial designs are revealed, utilizing thin barriers, with a wide and shallow quantum well that satisfies the strained layer epitaxy constraint. We then assess the advantages to epitaxial perfection and electrical characteristics provided by devices with a narrow InAs sub-well inside a lattice-matched InGaAs alloy. These new structures will assist in the realization of the next-generation submillimeter emitters.
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