Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 9, Pages 1294-1297Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2856537
Keywords
Content addressable memory (CAM); RRAM; Ge; nonvolatile; integration density
Categories
Funding
- National Key Research and Development Program [2017YFA0207600]
- NSFC [61704152]
- National Science and Technology Major Project of the Ministry of Science, Technology of China [2017ZX02315001-007]
- Fundamental Research Funds for the Central Universities
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In this work, we developed an asymmetric Ge-based RRAM using a fully CMOS compatible process. Due to the adoption of a thin AlOx/GeOx interfacial layer, the TiN/HfOx/AlOx/GeOx/Ge structured RRAM shows both excellent switching behavior and diodelike rectifying characteristics. Based on the asymmetric RRAM device, a high density nonvolatile content addressable memory was proposed and demonstrated, and its function was verified by experimental measurements. This novel two-asymmetric RRAM-based TCAM cell with only 8F(2) size is very promising for future energy and area-efficient IoT and Internet applications.
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