Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 6, Pages 863-865Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2828844
Keywords
Gallium nitride (GaN); vertical transistor; CAVET; trench CAVET
Categories
Funding
- NSF CAREER [1719219]
- DARPA YFA
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In this letter, we report a high-voltage metal-insulator-semiconductor gate trench current aperture vertical electron transistor using metal-organic chemical vapor deposition regrown AlGaN/GaN as the channel and in-situ Si3N4 as the gate dielectric. The device had a high breakdown voltage of 880 V and a low R-on,R-sp of 2.7 m Omega . cm(2). A low hysteresis of similar to 0.1 V was observed due to the high quality of the in situ Si3N4.
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