Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 4, Pages 572-575Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2808684
Keywords
GaN; power semiconductor devices; Schottky barrier diode; plasma nitridation; ideality factor; breakdown voltage; edge termination
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Funding
- National Key Research and Development Program of China [2017YFB0404100]
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We report a high-performance vertical GaN-on-GaN Schottky barrier diode (SBD) with a planar nitridation-based termination (NT) technique. The developed NT-SBD with nearly ideal Schottky contact exhibits a forward current density over kA/cm(2), current swing over 10(13), and differential specific ON-resistance of 1.2 m Omega.cm(2). The breakdown voltage is boosted from 335 V for unterminated-SBD to 995 V after termination, whereas a high ON/OFF current ratio (I-ON/I-OFF at -600 V) of similar to 10(8) is realized in the NT-SBD. It has been verified that the NT technique can favorably modify GaN surface condition, leading to suppressed leakage current at the junction edge and enhanced breakdown voltage.
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