Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 1, Pages 87-90Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2771390
Keywords
Ferroelectric; HfZrOx; NH3 plasma; wake-up; fatigue; endurance; retention; reliability
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Funding
- National Science Council of Taiwan [MOST 105-2221-E-007-106-MY3]
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TiN/ferroelectric-HfZrOx (FE-HZO)/TiN capacitors were employed as the platform to investigate the impact of plasma treatment on reliability of FE-HZO. NH3 plasma treatment at different HZO/TiN interfaces was carried out to study the dependence of oxygen vacancies (Vo) on FE behaviors against cycling. It has been electrically confirmed that HZO free from wake-up and fatigue effects up to 106 cycles (+/- 2.5 MV/cm, long pulses of 1 ms) with high. value of 29 similar to 30, low leakage current can be achieved by treatments at both top and bottom interfaces. It is a great advancefor HfO2-based FE and ismainly attributed to significant reduction of Vo in HZO, especially the treatment at the bottom interface, which greatly suppresses the formation of oxygen-deficient HZO. Fewer Vo in NH3-plasma-treated HZO has also been confirmed by physical analysis. The plasma treatment has shed light on a feasible approach to enhance FE reliability.
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