Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 8, Pages 1183-1186Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2845114
Keywords
N-channel organic thin-film transistors (OTFTs); ultra-thin; flexible; conformal
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Funding
- National Natural Science Foundation of China [61574032, 51703020, 51732003, 51322305]
- 111 Project [B13013]
- China Post-Doctoral Science Foundation [2016M601361]
- Fundamental Research Funds for the Central Universities [2412017QD008]
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Polymethyl methacrylate (PMMA)/poly(vinylalcohol) (PVA) bilayer polymer dielectrics were used to fabricate ultra-thin free-substrate n-type PTCDI-C13 organic thin-film transistors. PVA can help peel the entire device from the supporting layer, while PMMA improves the performance of the n-type OTFTs. As a result, we were able to achieve a current ON/OFF ratio exceeding 10(7) for an ultrathin (similar to 590nm) substrate-freePTCDI-C13OTFT. The electron mobility achieved as high as 0.54cm(2) V-1 s(-1). These n-type OTFTs can successfully adhere to a 3-D curved surface with nearly unaltered mobility and current ON/OFF ratio and a strong resistance to crumpling. These results show that ultrathin flexible n-channel OTFTs have promising potential for applications in flexible and conformal electronicdevices.
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