Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 4, Pages 626-629Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2804388
Keywords
Two-dimensional materials; non-equilibrium green functions; FET; ballistic transport; monochalcogenides
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Funding
- Graphene Flagship [696656]
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We explore the performance limits of monolayer InSe n-type and p-type FETs by means of first-principle simulations of carrier transport in nanoscale devices. We evaluate the impact on device performance of different device parameters, such as channel length, oxide thickness, and gate underlap. Finally, we assess the operation of a 32-bit CMOS ALU, based on InSe FETs with 10-nm channel length, for both high-performance and low-power applications, and find promising figures of merit with respect to CMOS and other beyond-CMOS proposals.
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