Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 6, Pages 827-830Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2829761
Keywords
ZnOheterostructure; sheet charge density; dual ion beam sputtering (DIBS); 2-DEG
Categories
Funding
- DST SERB [EMR/2016/006847]
- Ministry of Electronics and Information Technology (MeitY), Government of India
- Council of Scientific and Industrial Research
- MeitY, Government of India
Ask authors/readers for more resources
In this letter, we report on achieving significantly high (similar to 6x) sheet charge density (n(s)) in MgZnO/CdZnO heterostructure, as compared with that in MgZnO/ZnO, at lower Mg (<= 0.15) compositions in barrier MgZnO layer, with both heterostructures grown by dual ion beam sputtering technique. Buffer CdZnO and barrier MgZnO layers are probed separately to investigate carrier density in defect prone sputtered layers. Capacitance-voltage measurement and temperature-dependent Hall measurement confirm the presence of quantum confined carrier density at barrier-buffer interface, suggesting that the enhancement in carrier densities in the heterostructure over individual layers is probably due to the formation of 2-D electron gas (2-DEG).
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available