Tunable Low-Frequency Noise in Dual-Gate MoS2 Transistors

We have systematically studied the effect of the back-gate voltage on the low-frequency noise properties of the MoS2 transistors from 300 to 20 K in this work. The results show that the performance of the top-gate MoS2 transistor can be effectively tuned by the back-gate voltage V-bg. When Vbg increases to 20 V, the maximum on-current increases up to 588 mu A/mu m for the 1-mu m channel length device, as well as five times reduction of the low-frequency noise and two times reduction in contact resistance. The Fermi-level modulation by adjusting Vbg turns out to be an effective way of improving contact resistance and low-frequency noise for future high-quality MoS2 metal-oxide-semiconductor field-effect transistors.