Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 4, Pages 548-551Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2805229
Keywords
Bipolar junction transistor (BJT); high-temperature IC; linear voltage regulator (LVR); silicon carbide (SiC)
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Funding
- Knut and Alice Wallenberg Foundation
- Swedish Foundation for Strategic Research
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This letter reports on a fully integrated 2-A linear voltage regulator operational in a wide temperature range from 25 degrees C up to 500 degrees C fabricated in 4H-SiC technology. The circuit provides a stable output voltage with less than 1% variation in the entire temperature range. This letter demonstrates the first power supply solution providing both high-temperature (up to 500 degrees C) and high-load driving capabilities (up to 2 A).
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