Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 4, Pages 504-507Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2800725
Keywords
Copper; contact resistance; thin film transistors; ITO; a-IGZO
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Funding
- National Key Research and Development Program of China [2016YFB0401504]
- National Natural Science Foundation of China [51771074, U1601651]
- National Key Basic Research and Development Program of China (973 program) [2015CB655004]
- Guangdong Natural Science Foundation [2016A030313459, 2017A030310028]
- Science and Technology Project of Guangdong Province [2016B090907001, 2016A040403037, 2016B090906002]
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In this letter, we propose a strategy to improve the electrical performance of amorphous In-Ga-Zn-O (a-IGZO) thin film transistor (TFT) with the copper (Cu) electrodes by depositing a 30-nm thick In-Sn-O (ITO) interlayer on top of IGZO layer to suppress Cu migration. As a result, the a-IGZO TFT with ITO interlayer exhibits enhanced electrical performance (V-TH of 1.5 V, mu(FE) of 11.5 cm(2)/Vs, SS of 0.2 V/dec, I-ON/I-OFF of 2.4 x 10(10), and RCW: 18 cm).
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