Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 3, Pages 375-378Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2798061
Keywords
Indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs); anodized AlxOy; low operating voltage
Categories
Funding
- Engineering and Physical Sciences Research Council (EPSRC) [EP/N021258/1]
- North-West Nanoscience Doctoral Training Centre, EPSRC [EP/G03737X/1]
- National Natural Science Foundation of China [11304180, 11374185]
- National Key Research and Development Program of China [2016YFA0301200]
- EPSRC [EP/N021258/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/N021258/1, 1353965] Funding Source: researchfish
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Indium-gallium-zinc-oxide thin-film transistors (TFTs) with solution-processed, high-capacitance AlxOy gate dielectrics have been fabricated at room temperature. The morphology and electrical properties of the anodized, ultra-thin AlxOy film have been studied. Several anodization voltages were used to create the gate dielectrics and the results showed that the TFTs gated with aluminum oxide anodized at 2.3 V (similar to 3 nm) exhibited the best performance. The TFTs operate at an ultra-low voltage of 1 V with a high current on/off ratio >10(5) and a subthreshold swing (SS) as low as 68 mV/dec, which is very close to the theoretical limit of SS at 300 K. As a result, the presented devices possess a great potential for low-power electronics.
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