Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 2, Pages 268-271Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2788889
Keywords
Ruthenium; nanowires; thin films; resistivity modeling
Categories
Funding
- imec's industrial affiliate program on Nano-interconnects
- National Research Fund Luxembourg (ATTRACT) [7556175]
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Ru has been considered a candidate to replace Cu-based interconnects in VLSI circuits. Here, a methodology is proposed to predict the resistivity of (Ru) interconnects. First, the dependence of the Ru thin film resistivity on the film thickness is modeled by the semiclassical Mayadas-Shatzkes (MS) approach. The fitting parameters thus obtained are then used as input in a modified MS model for nanowires to calculatewire resistivities. Predicted experimental resistivities agreed within about 10%. The results further indicate that grain boundary scattering was the dominant scattering mechanism in scaled Ru interconnects.
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