Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 1, Pages 15-18Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2776263
Keywords
HfO2-based FeFETs; endurance; charge trapping; trap generation
Categories
Funding
- National Science Foundation [1609162]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1609162] Funding Source: National Science Foundation
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Recent demonstration of aggressively scaled HfO2-based ferroelectric field effect transistors (FE-HfO2-FETs) has illustrated a pathway to fabricate FeFETs that enjoy COMS-compatibility, low power, fast switching speed, scalability, and long retention. One potential issue of this promising technology is its limited endurance, which has been attributed to the degradation of gate stack before the fatigue of polarization in the ferroelectric HfO2 layer. Some associated work has identified charge trapping and trap generation as key villains, but a clear understanding of two aforementioned underlining mechanisms is still missing. In this letter, we initiated this letter to investigate the roles of charge trapping and trap generation in causing endurance failure of FE-HfO2 FETs.
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