Journal
3RD INTERNATIONAL CONFERENCE ON MATHEMATICAL MODELING IN PHYSICAL SCIENCES (IC-MSQUARE 2014)
Volume 574, Issue -, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1742-6596/574/1/012046
Keywords
-
Ask authors/readers for more resources
We calculate the band structure, density of states, phonon dispersions and thermodynamic properties of wurtzite Aluminum nitride (AlN) using the local density approximation (LDA) and the generalized gradient approximation (GGA). The results show that wurtzite AlN is a direct gap semiconductor. The phonon, dielectric, and thermodynamic properties are discussed in detail. The calculated values are in agreement with available experimental data.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available