4.2 Article

Dielectric, impedance relaxation and DC resistivity studies on microwave sintered Ba1-xRexTiO3(Re = Nd&Pr) ceramics using 5% SiO2 as sintering aid

Journal

FERROELECTRICS
Volume 526, Issue 1, Pages 46-54

Publisher

TAYLOR & FRANCIS LTD
DOI: 10.1080/00150193.2018.1456272

Keywords

Dielectric; impedance; PTCR; grain and grain boundary resistance; conductivity

Funding

  1. DST
  2. DRDO, Delhi, India

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Ba1-xRexTiO3 ceramics (Re = Nd&Pr with x = 0.002 & 0.004) were prepared through microwave sintering route using 5% SiO2 as sintering aid. The dielectric, impedance and DC resistivity studies were carried out over a wide range of temperature. From dielectric studies, it is observed that the transition temperature increased with the substitution of rare earth ions. The room temperature dielectric constant for the Nd (x = 0.002) doped barium titanate is higher when compared to other compositions and the value is 13,600.28. Impedance studies revealed relaxation behaviour. In the present study grain, grain boundary and sample-electrode effects were separated out by using Cole-Cole data. From the DC resistivity studies, it is observed that Pr (x = 0.004) doped barium titanate ceramic showed one order of magnitude PTCR effect.

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